Fully porous GaN p-n junctions fabricated by Chemical Vapor Deposition: a green technology towards more efficient LEDs

Abstract

Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increase the price of the final system. In this paper, we review the process followed towards the fabrication of fully porous GaN p-n junctions directly during the growth step, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.