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Molecular dynamics study of stress relaxation during Ge deposition on Si(100) 2×1 substrates

Martín Encinar, Luis

; Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; López Martín, Pedro

; Santos Tejido, Iván

; Pelaz Montes, María Lourdes

(2023)

First principles characterization of PnVm clusters in crystalline silicon

Santos Tejido, Iván

; Aboy Cebrián, María

; López Martín, Pedro

; Marqués Cuesta, Luis Alberto

; Martín Encinar, Luis

; Pelaz Montes, María Lourdes

(2023)

Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential

Martín Encinar, Luis

; Santos Tejido, Iván

; López Martín, Pedro

; Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; Pelaz Montes, María Lourdes

(2019)

IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

López Martín, Pedro

; Aboy Cebrián, María

; Muñoz, I.; Santos Tejido, Iván

; Marqués Cuesta, Luis Alberto

; Couso, Carlos; Ullán, Miguel; Pelaz Montes, María Lourdes

(2019)

Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

López Martín, Pedro

; Santos Tejido, Iván

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; Trochet, M.; Mousseau, N.; Pelaz Montes, María Lourdes

(2017)

Characterization of amorphous Si generated through classical molecular dynamics simulations

Santos Tejido, Iván

; López Martín, Pedro

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; Pelaz Montes, María Lourdes

(2017)

Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

Santos Tejido, Iván

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

; Ruiz Prieto, Manuel; Pelaz Montes, María Lourdes

; Hernández Díaz, A.M.; Castrillo, P. (2016)