Envíos recientes

Anzeige der Dokumente 1-5 von 7

Molecular dynamics study of stress relaxation during Ge deposition on Si(100) 2×1 substrates

Martín Encinar, Luis ; Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; López Martín, Pedro ; Santos Tejido, Iván ; Pelaz Montes, María Lourdes (2023)
First principles characterization of PnVm clusters in crystalline silicon

Santos Tejido, Iván ; Aboy Cebrián, María ; López Martín, Pedro ; Marqués Cuesta, Luis Alberto ; Martín Encinar, Luis ; Pelaz Montes, María Lourdes (2023)
Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential

Martín Encinar, Luis ; Santos Tejido, Iván ; López Martín, Pedro ; Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; Pelaz Montes, María Lourdes (2019)
IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

López Martín, Pedro ; Aboy Cebrián, María ; Muñoz, I.; Santos Tejido, Iván ; Marqués Cuesta, Luis Alberto ; Couso, Carlos; Ullán, Miguel; Pelaz Montes, María Lourdes (2019)
Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

Santos Tejido, Iván ; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; López Martín, Pedro ; Ruiz Prieto, Manuel; Pelaz Montes, María Lourdes ; Hernández Díaz, A.M.; Castrillo, P. (2016)