Characterization of amorphous Si generated through classical molecular dynamics simulations

Santos Tejido, Iván; López Martín, Pedro; Aboy Cebrián, María; Marqués Cuesta, Luis Alberto; Pelaz Montes, María Lourdes

doi:10.1109/CDE.2017.7905213

Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/32296

Título

Characterization of amorphous Si generated through classical molecular dynamics simulations

Autor

Santos Tejido, Iván

López Martín, Pedro

Aboy Cebrián, María

Marqués Cuesta, Luis Alberto

Pelaz Montes, María Lourdes

Congreso

2017 Spanish Conference on Electron Devices (CDE)

Año del Documento

2017

Editorial

Institute of Electrical and Electronics Engineers (IEEE)

Descripción

Producción Científica

Documento Fuente

2017 Spanish Conference on Electron Devices (CDE). Proceedings, 8-10 February 2017, Barcelona, pp. 1-4.

Abstract

We performed a characterization of the energetic and structural features of amorphous Si using classical molecular dynamics simulations. We generated amorphous Si samples from different procedures: quenching liquid silicon, accumulating the damage generated by subsequent energetic recoils, and accumulating point defects. The obtained energetic and structural features of these types of samples are analyzed to elucidate which procedure provides a more realistic a-Si structure.

Palabras Clave

Dinámica molecular

Silicio

Molecular dynamics

Silicon

ISBN

978-1-5090-5072-7

DOI

10.1109/CDE.2017.7905213

Patrocinador

Ministerio de Ciencia e Innovación (Proyect TEC2014-60694-P)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA331U14)

Version del Editor

https://ieeexplore.ieee.org/document/7905213