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Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/35190

Título
High resolution LBIC characterization of defects in mc-Si solar cells [Poster]
Autor
Congreso
17th Conference on Defects (DRIP XVII)
Año del Documento
2017
Documento Fuente
17th International Conference DRIP: Defects-Recognition, Imaging and Physics in Semiconductors, 8th to the 12th of October 2017, Valladolid, Spain
Resumo
Measuring the electrical activity of defects in commercial mc-Si solar cells at micrometric spaal resolution using the Light-Beam Induced Current (LBIC) technique combined with a ELi - PLi system.
Patrocinador
Ministerio de Economía, Industria y Competitividad (ENE2014-56069-C4-4-R)
Nota
Póster
Version del Editor
http://drip17.org/home/
Idioma
eng
URI
http://uvadoc.uva.es/handle/10324/35190
Derechos
openAccess
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