Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/44651
Título
Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
Autor
Año del Documento
2018
Editorial
AIP Publishing
Descripción
Producción Científica
Documento Fuente
Journal of Applied Physics, 2018, vol. 124, n. 15. 9 p.
Resumo
A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance
random access memory (RRAM)] was carried out under different bias conditions and in a wide
range of ac signal frequencies. We demonstrate that a continuum of intermediate states can be
obtained by applying appropriate dc bias waveforms. Cumulative writing and erasing admittance
cycles were performed by applying triangular voltage waveform of increasing amplitude. The influence of the initial conditions on the variation of the real (conductance) and imaginary (susceptance)
components of the admittance is described. An accurate control of the memory state is achieved
both in terms of the conductance and the susceptance by means of an adequate selection of the
voltage values previously applied. A method to obtain three-dimensional voltage-conductance-susceptance state-plots is described in detail. Memory maps of admittance parameters as a function of
the programming voltage are made by sensing the memory state at 0 V, without static power consumption. The multilevel nature of RRAM devices and their suitability for neuromorphic computation are demonstrated.
Palabras Clave
Metal oxides
Óxidos metálicos
Dielectric properties
Propiedades dieléctricas
Thin films
Láminas delgadas
ISSN
1089-7550
Revisión por pares
SI
Patrocinador
Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (grants TEC2014-52152-C3-3-R and TEC2014- 52152-C3-1-R)
Version del Editor
Propietario de los Derechos
© 2018 AIP Publishing
Idioma
eng
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
Aparece en las colecciones
- Untitled [57]
Arquivos deste item
![Attribution-NonCommercial-NoDerivatives 4.0 Internacional](/themes/Mirage2//images/creativecommons/cc-by-nc-nd.png)