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Título
Structure and behavior of ZrO2-graphene-ZrO2 stacks
Autor
Año del Documento
2020
Editorial
AIP Publishing
Descripción
Producción Científica
Documento Fuente
Journal of Vacuum Science & Technology A, 2020, vol. 38, n. 6. 10 p.
Abstract
ZrO2-graphene-ZrO2 layered structures were built and their crystallinity was characterized before resistive switching measurements. Thin nanocrystalline ZrO2 dielectric films were grown by atomic layer deposition on chemical vapor deposited graphene. Graphene was transferred, prior to the growth of the ZrO2 overlayer, to the ZrO2 film pre-grown on titanium nitride. Nucleation and growth of the top ZrO2 layer was improved after growing an amorphous Al2O3 interface layer on graphene at lowered temperatures. Studies on resistive switching in such structures revealed that the exploitation of graphene interlayers could modify the operational voltage ranges and somewhat increase the ratio between high and low resistance states.
Palabras Clave
Atomic layer deposition
Deposición atómica de capas
Nanomaterials
Nanomaterials
Thin films
Láminas delgadas
Graphene
Grafeno
ISSN
1520-8559
Revisión por pares
SI
Patrocinador
Fondo Europeo de Desarrollo Regional (project TK134)
Estonian Research Agency (grants PRG753 and PRG4)
Ministerio de Economía, Industria y Competitividad (grant TEC2017-84321-C4-2-R)
Estonian Research Agency (grants PRG753 and PRG4)
Ministerio de Economía, Industria y Competitividad (grant TEC2017-84321-C4-2-R)
Version del Editor
Propietario de los Derechos
© 2020 AIP Publishing
Idioma
eng
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
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