A comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON and OFF state are different for each structure due to specific physical mechanisms.
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