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Título
Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane
Autor
Año del Documento
2020
Editorial
IOP Publishing
Descripción
Producción Científica
Documento Fuente
Nanotechnology, 2020, Volume 31, Number 19
Resumo
Amorphous SiO2–Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC2H5)5, Si2(NHC2H5)6, and O3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11–7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current–voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.
Materias Unesco
2202 Electromagnetismo
Palabras Clave
Deposición de capa atómica
Atomic layer deposition
ISSN
0957-4484
Revisión por pares
SI
Patrocinador
Ministerio de Economía, Industria y Competitividad, FEDER program (TEC2017-84321-C4-2-R)
Version del Editor
Propietario de los Derechos
© 2020 IOP Publishing
Idioma
eng
Tipo de versión
info:eu-repo/semantics/acceptedVersion
Derechos
openAccess
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