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Título
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
Autor
Año del Documento
2021
Editorial
Elsevier
Descripción
Producción Científica
Documento Fuente
Solid-State Electronics, 2021, vol. 186, p. 108114
Abstract
Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different
technologies that fit into the non-volatile memories’ area. In this study, we discuss the performance and electrical characteristics
of RRAM cells constituted by MIM stacks with dielectric formed by Nb2O5-doped SiO2. We report experimental results that show
a clear improvement in the resistive behavior of the devices and an excellent analogical control of the intermediate levels between
high-resistance and low-resistance states.
Materias Unesco
22 Física
33 Ciencias Tecnológicas
Palabras Clave
RRAM
Niobium oxide
Silicon oxide
ISSN
0038-1101
Revisión por pares
SI
Patrocinador
Ministerio de Ciencia, Innovación y Universidades con el apoyo de fondos Feder (grant TEC2017-84321-C4-2-R)
Finnish Centre of Excellence in Atomic Layer Deposition (284623)
Estonian Research Agency (PRG753)
Finnish Centre of Excellence in Atomic Layer Deposition (284623)
Estonian Research Agency (PRG753)
Version del Editor
Propietario de los Derechos
© 2021 Elsevier
Idioma
eng
Tipo de versión
info:eu-repo/semantics/acceptedVersion
Derechos
openAccess
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