Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

Abstract

Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different technologies that fit into the non-volatile memories’ area. In this study, we discuss the performance and electrical characteristics of RRAM cells constituted by MIM stacks with dielectric formed by Nb2O5-doped SiO2. We report experimental results that show a clear improvement in the resistive behavior of the devices and an excellent analogical control of the intermediate levels between high-resistance and low-resistance states.