In this work, we have studied the set and the reset transitions in hafnium oxide-based
metal-insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a
conventional voltage or current signal, we have discharged a capacitor through the
devices to perform both transitions. In this way, both transitions are shown to be
controllable. An accumulative process is observed if we apply consecutive discharges,
and, when increasing the capacitor voltage in each discharge, the transitions between both
resistance states are complete. In addition, it has been shown that faster transitions require larger capacitor voltages.
