Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/49451
Título
Electrical activity of crystal defects in multicrystalline Si
Autor
Año del Documento
2020
Editorial
Springer Link
Descripción
Producción Científica
Documento Fuente
Journal of Electronic Materials, 2020, vol. 49. p. 5091-5096
Resumo
Upgraded metallurgical-grade silicon solar cells with different ranges of efficiencies have been characterized by light-beam-induced current (LBIC) measurements. The interaction between grain boundaries and metallic impurities is studied for cells fabricated on wafers from different solidification heights of the ingot. A tight relation is observed between the electrical activity of the grain boundaries and the position of the wafer in the ingot, which is related to the impurity contamination. The presence of a large amount of metallic impurities enhances the electrical activity of the grain boundaries. The main features of the LBIC images are discussed in relation to the presence of metallic impurities.
Palabras Clave
Multicrystalline silicon
Silicio policristalino
Grain boundaries
Bordes de grano
ISSN
0361-5235
Revisión por pares
SI
Patrocinador
Junta de Castilla y León (project VA283P18)
Ministerio de Economía, Industria y Competitividad (project ENE2017-89561-C4-3-R)
Ministerio de Economía, Industria y Competitividad (project ENE2017-89561-C4-3-R)
Version del Editor
Propietario de los Derechos
© 2020 The Minerals, Metals & Materials Society
Idioma
eng
Tipo de versión
info:eu-repo/semantics/acceptedVersion
Derechos
openAccess
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