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Título
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films
Autor
Año del Documento
2021
Editorial
Elsevier
Descripción
Producción Científica
Documento Fuente
Materials Science and Engineering: B, 2021, vol. 264. 114918
Abstract
Cathodoluminescence (CL) investigations are performed on nominally undoped and Si-doped ε-Ga2O3 samples grown by metal-organic vapor phase epitaxy on (0001)-Al2O3 substrates, using different carrier gases. All films exhibit a broad low-temperature CL emission extending over the photon energy range 2–3.4 eV. Emission deconvolution suggests that four narrower bands centered at about 2.4, 2.75, 3.0 and 3.15 eV may well account for the broad band. While the position of these peaks results independent of the growth conditions, significant intensity differences are observed. A general reduction of the broad emission is evidenced as the Si concentration increases. No band-to-band recombination is observed. Temperature dependence of the CL signal shows a trend consistent with radiative transitions from the CB to deep acceptor states, probably of intrinsic nature.
Palabras Clave
Gallium oxide
Óxido de galio
Cathodoluminescence
Catodoluminiscencia
ISSN
0921-5107
Revisión por pares
SI
Patrocinador
Junta de Castilla y León (project VA283P18)
Propietario de los Derechos
© 2021 Elsevier
Idioma
eng
Tipo de versión
info:eu-repo/semantics/acceptedVersion
Derechos
openAccess
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