Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/52827
Título
A study of the electrical activity of crystal defects in multicrystalline si
Autor
Congreso
Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII
Año del Documento
2019
Documento Fuente
Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII, Berlín, Alemania, 2019
Abstract
- The electrical activity of the extended defects is greatly influenced by the presence of metallic impurities.
- The activity of GBs depends on the background metallic impurities, as [M] decreases the GBs loss its electrical activity.
- Instead, the sub-grain boundaries present a higher electrical activity, even if [M] is reduced.
- The measure of the diffusion length in the presence of high concentrations of metallic impurities can be misleading.
Patrocinador
Ministerio de Ciencia e Innovación (Proyecto de Investigación ENE2017-89561-C4-3-R)
Junta de Castilla y León (Proyecto de Investigación VA283P18)
Junta de Castilla y León (Proyecto de Investigación VA283P18)
Idioma
eng
Tipo de versión
info:eu-repo/semantics/draft
Derechos
openAccess
Collections
Files in this item