Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/58643
Título
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
Autor
Año del Documento
2022
Editorial
Elsevier
Descripción
Producción Científica
Documento Fuente
Solid-State Electronics, 2022, vol. 194, p. 108385
Resumo
In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capacitor discharge. Instead of applying conventional voltage or current signals, the capacitor discharge through the devices is able to perform both transitions. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are completed. In addition, it has been shown that faster transitions require larger capacitor voltages. Further, the electrical results were used to tune the dynamic memdiode model, which was employed to simulate set and reset processes driven by the capacitor discharges. The model successfully reproduced the measured memristor response to the capacitor discharge.
Materias Unesco
33 Ciencias Tecnológicas
22 Física
Palabras Clave
Memristors
Resisitive switching
ReRAM
Set processes
Reset processes
ISSN
0038-1101
Revisión por pares
SI
Patrocinador
Ministerio de Ciencia, Innovación y Universidades y programa FEDER (proyectos TEC2017-84321-C4-1-R, TEC2017-84321-C4-2-R, TEC2017-84321-C4-3-R y TEC2017-84321-C4-4-R)
Version del Editor
Propietario de los Derechos
© 2022 The Author(s)
Idioma
eng
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
Aparece en las colecciones
Arquivos deste item
![Attribution-NonCommercial-NoDerivatives 4.0 Internacional](/themes/Mirage2//images/creativecommons/cc-by-nc-nd.png)