Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/65896
Título
Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures
Autor
Congreso
2017 Spanish Conference on Electron Devices (CDE)
Año del Documento
2017
Editorial
Institute of Electrical and Electronics Engineers
Descripción Física
5 p.
Descripción
Producción Científica
Documento Fuente
2017 Spanish Conference on Electron Devices (CDE), Barcelona, Spain, 2017, p. 1-4
Resumo
The electrical properties of Al 2 O 3 -based metal-insulator-semiconductor capacitors have been investigated. Three different metal gate electrodes were used: two mid-gap metals (TiN and tungsten) and aluminum, a metal with a work function close to the silicon electron affinity. Aluminum oxide films were grown on p-type silicon substrates by atomic layer deposition using trymethylaluminum and water as aluminum and oxygen precursors, respectively. The use of aluminum as the gate electrode prevents the formation of defects inside the oxide layers that could trap charge as has been found for W and TiN gate electrodes using C-V curves and flat band voltage transients. The use of TiN or W as gate electrodes increases the interfacial trap density. However, the leakage current, that follows a Fowler-Nordheim behavior, is low when using TiN electrodes due to a higher cathode barrier height.
Palabras Clave
Temperature measurement
Electrodes
Logic gates
Tin
Transient analysis
Semiconductor device measurement
high-k dielectrics
metal gates
atomic layer deposition
MIS capacitors
electrical characterization
ISBN
978-1-5090-5072-7
Patrocinador
This study has been supported by the Spanish TEC2014 under Grant Nos. 52152-C3-3-R, 52152-C3-1-R and 54906- JIN
Version del Editor
Idioma
spa
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
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