Total Visits

Views
Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices226

File Visits

Downloads
1-s2.0-S0167931717301545-main.pdf76

Select a period of time:

ViewsDownloads

Number of views in the range

Views
Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices109

Number of downloads in the range

Downloads
1-s2.0-S0167931717301545-main.pdf38

Views

Views
May 202527
June 202520
July 20259
August 202512
September 202517
October 202517
November 20257
Download CSV file
 
Bar graph
 
Line graph

Number of downloads in the period of time

  • Downloads
  • May 2025
    4
  • June 2025
    0
  • July 2025
    1
  • August 2025
    3
  • September 2025
    15
  • October 2025
    11
  • November 2025
    4
 
Bar graph
 
Line graph

Top country views

Views
United States26
Brazil20
Spain12
China10
Venezuela8
Vietnam5
Germany5
Russia3
Australia2
France2

Top countries by downloads

Downloads
United States13
China5
Spain3
Brazil3
Germany2
France2
Venezuela1

Top cities views

Views
Inca8
Frankfurt am Main4
Valladolid3
Ho Chi Minh City3
Singapore2
Acailandia1
Adelaide1
Amsterdam1
Bac Ninh1
Belo Jardim1

Top cities by downloads

Downloads
Inca2
Frankfurt am Main1
Valladolid1
Singapore1