Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

Santa Cruz González, C.; Sahelices Fernández, Benjamín; Jiménez López, Juan Ignacio; González Ossorio, Óscar; Castán Lanaspa, María Helena; González, M.B.; Vinuesa Sanz, Guillermo; Dueñas Carazo, Salvador; Campabadal, F.; García García, Héctor

doi:10.1109/CDE52135.2021.9455723

Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/66144

Título

Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

Congreso

13th Spanish Conference on Electron Devices (CDE)

Año del Documento

2021

Editorial

Institute of Electrical and Electronics Engineers

Descripción Física

4 p.

Descripción

Producción Científica

Documento Fuente

13th Spanish Conference on Electron Devices (CDE), Sevilla, Spain, 2021, p. 74-77

Résumé

A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimuli

Palabras Clave

Memristor

Resistive-switching device

Memdiode

Semiempirical model

ISBN

978-1-6654-4452-1

DOI

10.1109/CDE52135.2021.9455723

Patrocinador

Spanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-1-R, and TEC2017-84321-C4-2-R

Version del Editor