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Título
Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
Autor
Congreso
13th Spanish Conference on Electron Devices (CDE)
Año del Documento
2021
Editorial
Institute of Electrical and Electronics Engineers
Descripción Física
4 p.
Descripción
Producción Científica
Documento Fuente
13th Spanish Conference on Electron Devices (CDE), Sevilla, Spain, 2021, p. 74-77
Abstract
A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimuli
Palabras Clave
Memristor
Resistive-switching device
Memdiode
Semiempirical model
ISBN
978-1-6654-4452-1
DOI
10.1109/CDE52135.2021.9455723
Patrocinador
Spanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-1-R, and TEC2017-84321-C4-2-R
Version del Editor
https://ieeexplore.ieee.org/document/9455723
Idioma
eng
URI
https://uvadoc.uva.es/handle/10324/66144
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
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