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Título
Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge
Autor
Congreso
13th Spanish Conference on Electron Devices (CDE)
Año del Documento
2021
Editorial
Institute of Electrical and Electronics Engineers
Descripción Física
4 p.
Descripción
Producción Científica
Documento Fuente
13th Spanish Conference on Electron Devices (CDE), Sevilla, Spain, 2021, p. 4-7
Abstract
Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.
Palabras Clave
Memristor
Resistive-switching device
Set/reset processes
Capacitor
ISBN
978-1-6654-4452-1
DOI
10.1109/CDE52135.2021.9455756
Patrocinador
Spanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-I-R, TEC2017-84321-C4-2-R, TEC2017-84321-C4-3-R, TEC2017-84321-C4-4-R
Version del Editor
https://ieeexplore.ieee.org/document/9455756
Idioma
eng
URI
https://uvadoc.uva.es/handle/10324/66147
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
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