RT info:eu-repo/semantics/bookPart
T1 Defect characterization of UMG mc-Si solar cells using LBIC and luminescence imaging techniques
A1 Sánchez, L.A.
A1 Moretón Fernández, Ángel
A1 Guada, Miguel
A1 Rodríguez Conde, Sofía
A1 Martínez Sacristán, Óscar
A1 Jiménez López, Juan Ignacio
AB Upgraded metallurgical-grade silicon (UMG Si) solar cells with different ranges of efficiencies were characterized through electroluminescence imaging (ELi) and light-beam induced current (LBIC) measurements. The results showed a good correlation between the EL intensity and the efficiency of the solar cells. ELi images gave a bright contrast at the defects, grain boundaries and intragrain defects, and dark contrast inside the grain bodies. Metallic impurities are much more present in some cells due to the directional solidification of the Si ingot. Local short-circuit current mapping with LBIC measurements revealed a bright zone in the neighborhoods of the defects due to the depletion of impurities. Internal quantum efficiencies (IQE) and effective diffusion lengths (Leff) were calculated using different excitation wavelengths. High resolution LBIC measurements revealed micrometric clusters of impurities around intragrain defects
PB Materials Research Society
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/31333
UL http://uvadoc.uva.es/handle/10324/31333
LA eng
NO MRS Advances, 2018, Volume 3, Issue 57-58 (Electronic and Photonic Materials), pp. 3359-3365
DS UVaDOC
RD 01-may-2024