RT info:eu-repo/semantics/article
T1 Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
A1 Pelaz Montes, María Lourdes
A1 Marqués Cuesta, Luis Alberto
A1 Aboy Cebrián, María
A1 Santos Tejido, Iván
A1 López Martín, Pedro
A1 Duffy, Ray
K1 Implantación de iones
K1 Ion implantation
AB Ion implantation continues being the dominant technique to introduce dopants in Si devices. With the device feature size in the nanometer scale, the accurate and detailed description of as-implanted dopant and damage profiles is becoming key as advanced annealing techniques are almost diffusionless. The demanding requirements for ultrashallow junction formation are stimulating the development of improved and detailed models for molecular implants and for the kinetics of amorphous damage. Additional challenges arise in the doping of advanced architectures, such as fin field effect transistors, because the introduction of highly tilted ions is quite inefficient and, in addition, the regrowth of amorphous regions in narrow structures is hampered by the slow regrowth at free interfaces and {111} planes. Atomistic simulations play a relevant role to provide the understanding for the development of simplified physically based models computationally more efficient.
PB American Vacuum Society
SN 2166-2746
YR 2010
FD 2010
LK http://uvadoc.uva.es/handle/10324/31964
UL http://uvadoc.uva.es/handle/10324/31964
LA eng
NO Journal of Vacuum Science & Technology B, 2010, 28, C1A1-C1A6
NO Producción Científica
DS UVaDOC
RD 16-may-2024