RT info:eu-repo/semantics/article
T1 Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone
A1 Kalam, Kristjan
A1 Rammula, Raul
A1 Ritslaid, Peeter
A1 Käämbre, Tanel
A1 Link, Joosep
A1 Stern, Raivo
A1 Vinuesa Sanz, Guillermo
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Tamm, Aile
A1 Kukli, Kaupo
K1 Atomic layer deposition
K1 Deposición de capas atómicas
K1 Thin films
K1 Láminas delgadas
K1 Magnetic materials
K1 Materiales magnéticos
K1 Resistive switching
K1 Conmutación resistiva
AB Atomic layer deposition method was used to grow thin films consisting of ZrO2 and MnOx layers. All depositions were carried out at 300 ºC. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as crystallinity and the dependence of growth rate on the deposition temperature. All films were partly crystalline in their as-deposited state. Zirconium oxide contained cubic and tetragonal phases of ZrO2, while the manganese oxide was shown to consist of cubic Mn2O3 and tetragonal Mn3O4 phases. All the films exhibited nonlinear saturative magnetization with hysteresis, as well as resistive switching characteristics.
PB IOP Publishing
SN 1361-6528
YR 2021
FD 2021
LK http://uvadoc.uva.es/handle/10324/46598
UL http://uvadoc.uva.es/handle/10324/46598
LA eng
NO Nanotechnology, 2021. In press. 27 p.
NO Producción Científica
DS UVaDOC
RD 28-abr-2024