RT info:eu-repo/semantics/article
T1 Point-Defects Assisted Zn-Diffusion in AlGaInP/GaInP Systems During the MOVPE Growth of Inverted Multijunction Solar Cells
A1 Hinojosa, Manuel
A1 García, Iván
A1 Dadgostar, Shabnam
A1 Algora del Valle, Carlos
K1 Epitaxy
K1 Epitaxia
K1 Multijunction solar cells
K1 Células fotovoltaicas multiunión
K1 Zinc diffusion
K1 Difusión de zinc
AB We investigate the dynamics of Zn diffusion in MOVPE-grown AlGaInP/GaInP systems by the comparison of different structures that emulate the back-surface field (BSF) and base layers of a GaInP subcell integrated into an inverted multijunction solar cell structure. Through the analysis of secondary ion mass spectroscopy, electrochemical capacitance-voltage and spectrally resolved cathodoluminescence measurements, we provide experimental evidence that 1) the Zn diffusion is enhanced by point defects injected during the growth of the tunnel junction cathode layer; 2) the intensity of the process is determined by the cathode doping level and it happens for different cathode materials; 3) the mobile Zn is positively charged; and 4) the diffusion mechanism reduces the CuPt ordering in GaInP. We demonstrate that using barrier layers the diffusion of point defects can be mitigated, so that they do not reach Zn-doped layers, preventing its diffusion. Finally, the impact of Zn diffusion on solar cells with different Zn-profiles is evaluated by comparing the electrical I-V curves at different concentrations. The results rule out the introduction of internal barriers in the BSF but illustrate how Zn diffusion under typical growth condition can reach the emitter and dramatically affect the series resistance, among other effects.
PB IEEE Xplore
SN 2156-3381
YR 2020
FD 2020
LK https://uvadoc.uva.es/handle/10324/49414
UL https://uvadoc.uva.es/handle/10324/49414
LA eng
NO IEEE Journal of Photovoltaics, 2021 ,vol 11, n. 2. p. 429-436
NO Producción Científica
DS UVaDOC
RD 03-jun-2024