RT info:eu-repo/semantics/article
T1 Memory effects in nanolaminates of hafnium and iron oxide films structured by atomic layer deposition
A1 Kalam, Kristjan
A1 Otsus, Markus
A1 Kozlova, Jekaterina
A1 Tarre, Aivar
A1 Kasikov, Aarne
A1 Rammula, Raul
A1 Link, Joosep
A1 Stern, Raivo
A1 Vinuesa Sanz, Guillermo
A1 Lendínez Sánchez, José Miguel
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Tamm, Aile
A1 Kukli, Kaupo
K1 Thin films
K1 Atomic layer deposition
K1 Oxide
K1 Hafnium
K1 Iron oxides
K1 Oxido ferroso
K1 Nanoparticles
K1 Nanoparticulas
K1 Nanotechnology
K1 Nanotecnología
K1 Ferromagnetism
K1 Magnetism
K1 Magnetic materials
K1 Materiales magnéticos
K1 Resistive switching
K1 Switching circuits
K1 Circuitos eléctricos
K1 Microelectronics
K1 3303 Ingeniería y Tecnología Químicas
K1 2202.08 Magnetismo
K1 3307.90 Microelectrónica
AB HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of Fe2O3. However, coercive force could also be enhanced by the choice of appropriate ratios of HfO2 and Fe2O3 in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5–350 K, decreasing towards higher temperatures and increasing with the films’ thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO2 layers grown alternately with magnetic Fe2O3 exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.
PB MDPI
SN 2079-4991
YR 2022
FD 2022
LK https://uvadoc.uva.es/handle/10324/62051
UL https://uvadoc.uva.es/handle/10324/62051
LA eng
NO Nanomaterials, 2022, Vol. 12, Nº. 15, 2593
NO Producción Científica
DS UVaDOC
RD 03-jun-2024