RT info:eu-repo/semantics/conferenceObject
T1 A physically based model to describe resistive switching in different RRAM technologies
A1 González-Cordero, G.
A1 González, M.B.
A1 García García, Héctor
A1 Campabadal, F.
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 Jiménez-Molinos, F.
A1 Roldán, J.B.
K1 Dielectrics
K1 Mathematical model
K1 Switches
K1 Electrodes
K1 Integrated circuit modeling
K1 Data models
K1 Physics
K1 Compact model
K1 device modeling;non-volatile memory
K1 resistive RAM
K1 Resistive switching memory
K1 RRAM
AB A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap between the CF tip and the electrode, are taken into consideration. The thermal description of the CF is included by solving the heat equation. The model has been employed to reproduce I-V curves of different RRAM technologies making use of the correct model parameters in each case. Therefore, it is suitable to be implemented in circuit simulators to analyze circuits based on RRAMs under different operation regimes.
PB Institute of Electrical and Electronics Engineers
SN 978-1-5090-5072-7
YR 2017
FD 2017
LK https://uvadoc.uva.es/handle/10324/65902
UL https://uvadoc.uva.es/handle/10324/65902
LA spa
NO 2017 Spanish Conference on Electron Devices (CDE), Barcelona, Spain, 2017, p. 1-4,
NO Producción Científica
DS UVaDOC
RD 23-may-2024