TY  - JOUR 
AU  - García García, Héctor
AU  - Boo Alvarez, Jonathan
AU  - Vinuesa Sanz, Guillermo
AU  - González Ossorio, Óscar
AU  - Sahelices Fernández, Benjamín
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Bargalló González, Mireia
AU  - Campabadal Segura, Francesca
PY  - 2021
SN  - 2079-9292
UR  - https://uvadoc.uva.es/handle/10324/59092
AB  - In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After...
LA  - eng
PB  - MDPI
KW  - Electric resistors
KW  - Switching circuits
KW  - Electronic Circuits and Devices
KW  - Resistive switching
KW  - ReRAM devices
KW  - Neuromorphic computing
KW  - Conduction mechanisms
TI  - Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
DO  - 10.3390/electronics10222816
ER  -