TY  - GEN 
AU  - González-Cordero, G.
AU  - González, M.B.
AU  - García García, Héctor
AU  - Campabadal, F.
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - Jiménez-Molinos, F.
AU  - Roldán, J.B.
PY  - 2017
SN  - 978-1-5090-5072-7
UR  - https://uvadoc.uva.es/handle/10324/65902
AB  - A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the...
LA  - spa
PB  - Institute of Electrical and Electronics Engineers
KW  - Dielectrics
KW  - Mathematical model
KW  - Switches
KW  - Electrodes
KW  - Integrated circuit modeling
KW  - Data models
KW  - Physics
KW  - Compact model
KW  - device modeling;non-volatile memory
KW  - resistive RAM
KW  - Resistive switching memory
KW  - RRAM
TI  - A physically based model to describe resistive switching in different RRAM technologies
DO  - 10.1109/CDE.2017.7905223
ER  -