TY  - JOUR 
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - García García, Héctor
AU  - Miranda, E.
AU  - González, M.B.
AU  - Campabadal, F.
PY  - 2017
SN  - 0167-9317
UR  - https://uvadoc.uva.es/handle/10324/65968
AB  - Similarly to the current, the admittance of TiN/Ti/HfO2/W-based resistive memories shows well-defined minor switching loops associated with partial transitions between the ON and OFF states. Excellent control of the intermediate states is achieved in...
LA  - spa
PB  - ELSEVIER
KW  - RRAM devices
KW  - Admittance cycles
KW  - Hafnium oxide
KW  - Atomic layer deposition
TI  - Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices
DO  - 10.1016/j.mee.2017.04.020.
ER  -