TY  - JOUR 
AU  - Dueñas Carazo, Salvador
AU  - Castán Lanaspa, María Helena
AU  - González Ossorio, Óscar
AU  - García García, Héctor
PY  - 2019
SN  - 0167-9317
UR  - http://uvadoc.uva.es/handle/10324/45138
AB  - In this work, we have characterized hafnium oxide based bipolar resistive switching memories (RRAM) by measuring the small-signal conductance. The samples under study exhibit a continuum of intermediate states which can be accurately controlled by...
LA  - eng
PB  - Elsevier
KW  - Resistive switching
KW  - Conmutación resistiva
TI  - Dynamics of set and reset processes on resistive switching memories
DO  - 10.1016/j.mee.2019.111032
ER  -