TY  - GEN 
AU  - García García, Héctor
AU  - Castán Lanaspa, María Helena
AU  - Dueñas Carazo, Salvador
AU  - González, M.B.
AU  - Acero, M.C.
AU  - Campabadal, F.
PY  - 2017
SN  - 978-1-5090-5072-7
UR  - https://uvadoc.uva.es/handle/10324/65896
AB  - The electrical properties of Al 2 O 3 -based metal-insulator-semiconductor capacitors have been investigated. Three different metal gate electrodes were used: two mid-gap metals (TiN and tungsten) and aluminum, a metal with a work function close to...
LA  - spa
PB  - Institute of Electrical and Electronics Engineers
KW  - Temperature measurement
KW  - Electrodes
KW  - Logic gates
KW  - Tin
KW  - Transient analysis
KW  - Semiconductor device measurement
KW  - high-k dielectrics
KW  - metal gates
KW  - atomic layer deposition
KW  - MIS capacitors
KW  - electrical characterization
TI  - Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures
DO  - 10.1109/CDE.2017.7905235
ER  -