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DEP22 - Artículos de revista 25

Items ordenados por Fecha de envio en orden Descendente: 1 a 20 de 25
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IconosTítuloAutorAño del DocumentoFormato Mimetype
2018_Marques_NIMB.pdf.jpgOn the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted siliconMarqués Cuesta, Luis Alberto; Aboy Cebrián, María; Santos Tejido, Iván; López Martín, Pedro; Cristiano, Fuccio; La Magna, Antonino; Huet, Karim; Tabata, Toshiyuki; Pelaz Montes, María Lourdes2018application/pdf
2018_Santos_JNCS.pdf.jpgGeneration of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation studySantos Tejido, Iván; Aboy Cebrián, María; Marqués Cuesta, Luis Alberto; López Martín, Pedro; Pelaz Montes, María Lourdes2018application/pdf
Atomistic analysis of B clustering and mobility degradation in highly B-doped junctionsAboy Cebrián, María; Pelaz Montes, María Lourdes; López Martín, Pedro; Bruno, Elena; Mirabella, Salvo2010application/pdf
2010_Santos_PRB_81.pdf.jpgSelf-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiencySantos Tejido, Iván; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz Montes, María Lourdes; Marqués Cuesta, Luis Alberto2010application/pdf
2010_Pelaz_JVSTB_28.pdf.jpgSimulation of p-n junctions: Present and future challenges for technologies beyond 32 nmPelaz Montes, María Lourdes; Marqués Cuesta, Luis Alberto; Aboy Cebrián, María; Santos Tejido, Iván; López Martín, Pedro; Duffy, Ray2010application/pdf
2011_Santos_PRB_83.pdf.jpgElucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealingSantos Tejido, Iván; Pelaz Montes, María Lourdes; Marqués Cuesta, Luis Alberto; Colombo, Luciano2011application/pdf
2011_Duffy_APL_111.pdf.jpgThe curious case of thin-body Ge crystallizationDuffy, Ray; Shayesteh, M.; McCarthy, B.; Blake, A.; White, M.; Scully, J.; Yu, R.; Kelleher, A. M.; Schmidt, M.; Petkov, N.; Pelaz Montes, María Lourdes; Marqués Cuesta, Luis Alberto2011application/pdf
2011_Aboy_JAP_110.pdf.jpgKinetics of large B clusters in crystalline and preamorphized siliconAboy Cebrián, María; Pelaz Montes, María Lourdes; Bruno, Elena; Mirabella, Salvo; Boninelli, Simona2011application/pdf
2012_Santos_AIPCP_1496.pdf.jpgTemperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics studySantos Tejido, Iván; Marqués Cuesta, Luis Alberto; Pelaz Montes, María Lourdes; López Martín, Pedro; Aboy Cebrián, María2012application/pdf
2018_Santos_JEM_47.pdf.jpgIdentification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image SimulationSantos Tejido, Iván; Ruiz Prieto, Manuel; Aboy Cebrián, María; Marqués Cuesta, Luis Alberto; López Martín, Pedro; Pelaz Montes, María Lourdes2018application/pdf
2018_Aboy_JEM_47.pdf.jpgW and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale SimulationsAboy Cebrián, María; Santos Tejido, Iván; López Martín, Pedro; Marqués Cuesta, Luis Alberto; Pelaz Montes, María Lourdes2018application/pdf
Molecular-dynamics-simulations-damage.pdf.jpgMolecular dynamics simulations of damage production by thermal spikes in GeLópez Martín, Pedro; Pelaz Montes, María Lourdes; Santos Tejido, Iván; Marqués Cuesta, Luis Alberto; Aboy Cebrián, María2012application/pdf
Kinetic-Monte-Carlo.pdf.jpgKinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted siliconFisicaro, Giuseppe; Pelaz Montes, María Lourdes; López Martín, Pedro; La Magna, Antonino2012application/pdf
Molecular-dynamics-regrowth.pdf.jpgMolecular dynamics simulation of the regrowth of nanometric multigate Si devicesMarqués Cuesta, Luis Alberto; Pelaz Montes, María Lourdes; Santos Tejido, Iván; López Martín, Pedro; Duffy, Ray2012application/pdf
Sub-angstrom-experimental.pdf.jpgSub-ångstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in SiDudeck, Karleen J.; Marqués Cuesta, Luis Alberto; Knights, A. P.; Gwilliam, R. M.; Botton, Gianluigi A.2013application/pdf
Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealingFisicaro, Giuseppe; Pelaz Montes, María Lourdes; Aboy Cebrián, María; López Martín, Pedro; Italia, Markus; Huet, Karim; Cristiano, Filadelfo; Essa, Zahi; Yang, Qui; Bedel-Pereira, Elena; Quillec, Maurice; La Magna, Antonino2014application/pdf
Modeling-defects-dopant.pdf.jpgModeling of defects, dopant diffusion and clustering in siliconAboy Cebrián, María; Santos Tejido, Iván; Pelaz Montes, María Lourdes; Marqués Cuesta, Luis Alberto; López Martín, Pedro2014application/pdf
Atomistic-study-structural-electronic.pdf.jpgAtomistic study of the structural and electronic properties of a-Si:H/c-Si interfacesSantos Tejido, Iván; Cazzaniga, Marco; Onida, Giovanni; Colombo, Luciano2014application/pdf
Modeling-experimental-characterization-stepped.pdf.jpgModeling and experimental characterization of stepped and v-shaped {311} defects in siliconMarqués Cuesta, Luis Alberto; Aboy Cebrián, María; Dudeck, Karleen J.; Botton, Gianluigi A.; Knights, Andrew P.; Gwilliam, Russell M.2014application/pdf
Ultrafast-generation-unconventional-Supplemental-Material.pdf.jpgUltrafast generation of unconventional {001} loops in SiMarqués Cuesta, Luis Alberto; Aboy Cebrián, María; Santos Tejido, Iván; López Martín, Pedro; Cristiano, Fuccio; La Magna, Antonino; Huet, Karim; Tabata, Toshiyuki; Pelaz Montes, María Lourdes2017application/pdf
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