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  Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices 

  Aguirre, F L; González, M B; Jiménez-Molinos, F; Campabadal, F; Roldán, J B; Miranda, E; Castán Lanaspa, María Helena; Dueñas Carazo, Salvador; García García, Héctor; García-Ochoa, E.; Vinuesa Sanz, Guillermo (2023)
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  Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction 

  Jiménez-Molinos, F.; Tarre, A.; Tamm, A.; Kalam, K.; Kukli, K.; González, M. B.; Campabadal, F.; Roldán, J. B.; Dueñas Carazo, Salvador; Castán Lanaspa, María Helena; Vinuesa Sanz, Guillermo; García García, Héctor (2022)
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  Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature 

  Mistroni, Alberto; Jia, Ruolan; Dorai Swamy Reddy, Keerthi; Reichmann, Felix; Wenger, Christian; Perez, Eduardo; Castán Lanaspa, María Helena; Perez-Bosch Quesada, Emilio; Dueñas Carazo, Salvador (2024)
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  On the asymmetry of resistive switching transitions 

  Vinuesa Sanz, Guillermo; García García, Héctor; Pérez, Eduardo; Wenger, Christian; Íñiguez de la Torre, Ignacio; González, Tomás; Dueñas Carazo, Salvador; Castán Lanaspa, María Helena (2024)
• Influence of bismuth and cobalt doping on structural, dielectric, and magnetic properties of M-type calcium hexagonal ferrites 

  Panwar, M.N.; Khan, Hasan M.; Bano, N.; Zahid, Muhammad; Mazhar, Muhammad Ehsan; Bilal, Muhammad; Saleem, Muhammad Imran; Solre, Gideon F.B.; Li, Zhi; Hernández Gómez, Pablo (2024)

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