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DEP22 - Artículos de revista 14

Items ordenados por Fecha de envio en orden Descendente: 1 a 14 de 14
IconosTítuloAutorAño del DocumentoFormato Mimetype
Molecular-dynamics-simulations-damage.pdf.jpgMolecular dynamics simulations of damage production by thermal spikes in GeLópez Martín, Pedro; Pelaz Montes, María Lourdes; Santos Tejido, Iván; Marqués Cuesta, Luis Alberto; Aboy Cebrián, María2012application/pdf
Kinetic-Monte-Carlo.pdf.jpgKinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted siliconFisicaro, G.; Pelaz Montes, María Lourdes; López Martín, Pedro; La Magna, Antonino2012application/pdf
Molecular-dynamics-regrowth.pdf.jpgMolecular dynamics simulation of the regrowth of nanometric multigate Si devicesMarqués Cuesta, Luis Alberto; Pelaz Montes, María Lourdes; Santos Tejido, Iván; López Martín, Pedro; Duffy, Ray2012application/pdf
Sub-angstrom-experimental.pdf.jpgSub-ångstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in SiDudeck, K. J.; Marqués Cuesta, Luis Alberto; Knights, A. P.; Gwilliam, R. M.; Botton, G. A.2013application/pdf
Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealingFisicaro, Giuseppe; Pelaz Montes, María Lourdes; Aboy Cebrián, María; López Martín, Pedro; Italia, Markus; Huet, Karim; Cristiano, Filadelfo; Essa, Zahi; Yang, Qui; Bedel-Pereira, Elena; Quillec, Maurice; La Magna, Antonino2014application/pdf
Modeling-defects-dopant.pdf.jpgModeling of defects, dopant diffusion and clustering in siliconAboy Cebrián, María; Santos Tejido, Iván; Pelaz Montes, María Lourdes; Marqués Cuesta, Luis Alberto; López Martín, Pedro2014application/pdf
Atomistic-study-structural-electronic.pdf.jpgAtomistic study of the structural and electronic properties of a-Si:H/c-Si interfacesSantos Tejido, Iván; Cazzaniga, Marco; Onida, Giovanni; Colombo, Luciano2014application/pdf
Modeling-experimental-characterization-stepped.pdf.jpgModeling and experimental characterization of stepped and v-shaped {311} defects in siliconMarqués Cuesta, Luis Alberto; Aboy Cebrián, María; Dudeck, Karleen J.; Botton, Gianluigi A.; Knights, Andrew P.; Gwilliam, Russell M.2014application/pdf
Ultrafast-generation-unconventional-Supplemental-Material.pdf.jpgUltrafast generation of unconventional {001} loops in SiMarqués Cuesta, Luis Alberto; Aboy Cebrián, María; Santos Tejido, Iván; López Martín, Pedro; Cristiano, Fuccio; La Magna, Antonino; Huet, Karim; Tabata, Toshiyuki; Pelaz Montes, María Lourdes2017application/pdf
detailed-approach-classification-statistical-analysis.pdf.jpgA detailed approach for the classification and statistical analysis of irradiation induced defectsLópez Martín, Pedro; Santos Tejido, Iván; Aboy Cebrián, María; Marqués Cuesta, Luis Alberto; Pelaz Montes, María Lourdes2015application/pdf
Atomistic-modeling-implantation.pdf.jpgAtomistic modeling of ion implantation technologies in siliconMarqués Cuesta, Luis Alberto; Santos Tejido, Iván; Pelaz Montes, María Lourdes; López Martín, Pedro; Aboy Cebrián, María2015application/pdf
Molecular-dynamics-simulation-early-stages.pdf.jpgMolecular dynamics simulation of the early stages of self-interstitial clustering in siliconMarqués Cuesta, Luis Alberto; Santos Tejido, Iván; Pelaz Montes, María Lourdes; López Martín, Pedro; Aboy Cebrián, María2016application/pdf
Insights-atomistic-origin .pdf.jpgInsights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulationsSantos Tejido, Iván; Aboy Cebrián, María; López Martín, Pedro; Marqués Cuesta, Luis Alberto; Pelaz Montes, María Lourdes2016application/pdf
Improved-physical-models-silicon.pdf.jpgImproved physical models for advanced silicon device processingPelaz Montes, María Lourdes; Marqués Cuesta, Luis Alberto; Aboy Cebrián, María; López Martín, Pedro; Santos Tejido, Iván2017application/pdf
Items ordenados por Fecha de envio en orden Descendente: 1 a 14 de 14
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