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dc.contributor.authorAnaya, Julián
dc.contributor.authorTorres, Alfredo
dc.contributor.authorJiménez López, Juan Ignacio 
dc.contributor.authorPrieto, Carmelo
dc.contributor.authorRodríguez, Andrés
dc.contributor.authorRodríguez, Tomás
dc.contributor.authorBallesteros, Carmen
dc.date.accessioned2016-12-16T10:24:57Z
dc.date.available2016-12-16T10:24:57Z
dc.date.issued2015
dc.identifier.citationMRS Proceedings, 2015, vol. 1751es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/21801
dc.descriptionProducción Científicaes
dc.description.abstractMicroRaman spectroscopy was used for the characterization of heterostructured SiGe/Si nanowires. The NWs were grown with alloyed AuGa catalysts droplets with different Ga compositions aiming to make more abrupt heterojunctions. The heterojunctions were first characterized by TEM; then the NWs were scanned by the laser beam in order to probe the heterojunction. The capability of the MicroRaman spectroscopy for studying the heterojunction is discussed. The results show that the use of catalysts with lower Ge and Si solubility (AuGa alloys) permits to achieve more abrupt junctions.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherMaterials Reseracrh Societyes
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectEnhanced Signal Micro-Ramanes
dc.titleEnhanced Signal Micro-Raman Study of SiGe Nanowires and SiGe/Si Nanowire Axial Heterojuntions Grown Using Au and Ga-Au Catalystses
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doi10.1557/opl.2015.88es
dc.peerreviewedSIes
dc.description.projectJunta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International


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