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dc.contributor.authorOmanakuttan, Giriprasanth
dc.contributor.authorMartínez Sacristán, Óscar 
dc.contributor.authorMarcinkevičius, Saulius
dc.contributor.authorKristijonas Uždavinys, Tomas
dc.contributor.authorJiménez López, Juan Ignacio 
dc.contributor.authorHasan, Ali
dc.contributor.authorLeifer, Klaus
dc.contributor.authorLourdudoss, Sebastian
dc.contributor.authorSun, Yan-Ting
dc.date.accessioned2019-03-05T08:34:35Z
dc.date.available2019-03-05T08:34:35Z
dc.date.issued2019
dc.identifier.citationOptical Materials Express Vol. 9, Issue 3, pp. 1488-1500 (2019)es
dc.identifier.issn2159-3930es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/34905
dc.descriptionProducción Científicaes
dc.description.abstractWe fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherOptical Society of Americaes
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.classificationPropiedades ópticases
dc.subject.classificationOptical propertieses
dc.subject.classificationTécnica de crecimiento epitaxiales
dc.subject.classificationCELOGes
dc.titleOptical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowthes
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doihttps://doi.org/10.1364/OME.9.001488es
dc.relation.publisherversionhttps://www.osapublishing.org/ome/abstract.cfm?uri=ome-9-3-1488es
dc.peerreviewedSIes
dc.description.projectMinisterio de Economía, Industria y Competitividad (Proyect ENE2014-56069-C4-4-R)es
dc.description.projectJunta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Project VA081U16)es
dc.description.projectSwedish Energy Agency and SOLAR-ERA.NET (program 40176-1),es
dc.description.projectSwedish Research Council through Linné Excellence Center ADOPTes
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International


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