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Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

Santos Tejido, Iván ; Caballo Zulueta, Ana; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; López Martín, Pedro ; Pelaz Montes, María Lourdes (2022)
Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

López Martín, Pedro ; Aboy Cebrián, María ; Muñoz Velasco, Irene; Santos Tejido, Iván ; Marqués Cuesta, Luis Alberto ; Fernández Martínez, Pablo; Ullán, Miguel; Pelaz Montes, María Lourdes (2022)
Atomistic modeling of laser-related phenomena

Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; López Martín, Pedro ; Santos Tejido, Iván ; Pelaz Montes, María Lourdes ; Fisicaro, Giuseppe (2021)
Achieving junction stability in heavily doped epitaxial Si:P

Tsai, C.H.; Hsu, Y.H.; Santos Tejido, Iván ; Pelaz Montes, María Lourdes ; Kowalski, J.E.; Liou, J.W.; Woon, W.Y.; Lee, C.K. (2021)
Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential

Martín Encinar, Luis; Santos Tejido, Iván ; López Martín, Pedro ; Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; Pelaz Montes, María Lourdes (2019)