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  Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study 

  López Martín, Pedro; Aboy Cebrián, María; Santos Tejido, Iván; Marqués Cuesta, Luis Alberto; Ullán, Miguel; Pelaz Montes, María Lourdes (2022)
• Rapid thermal process driven intra-die device variations 

  Tsai, Chinhao; Aboy Cebrián, María; Pelaz Montes, María Lourdes; Hsu, Yu-Hsiang; Woon, Wei-Yen; Timans, Paul J.; Lee, Chih-Kung (2022)
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  Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit 

  Tsai, Chun-Hsiung; Savant, Chandrashekhar P.; Asadi, Mohammad Javad; Lin, Yu-Ming; Santos Tejido, Iván; Hsu, Yu-Hsiang; Kowalski, Jeffrey; Pelaz Montes, María Lourdes; Woon, Wei-Yen; Lee, Chih-Kung; Hwang, James C. M. (2022)
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  Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism 

  Santos Tejido, Iván; Caballo Zulueta, Ana; Aboy Cebrián, María; Marqués Cuesta, Luis Alberto; López Martín, Pedro; Pelaz Montes, María Lourdes (2022)
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  Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons 

  López Martín, Pedro; Aboy Cebrián, María; Muñoz Velasco, Irene; Santos Tejido, Iván; Marqués Cuesta, Luis Alberto; Fernández Martínez, Pablo; Ullán, Miguel; Pelaz Montes, María Lourdes (2022)

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