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Título
Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures
dc.contributor.authorAnaya, Julián
dc.contributor.authorTorres, Alfredo
dc.contributor.authorJiménez López, Juan Ignacio 
dc.contributor.authorRodríguez, Andrés
dc.contributor.authorRodríguez, Tomás
dc.contributor.authorBallesteros, Carmen
dc.date.accessioned2016-12-16T10:03:44Z
dc.date.available2016-12-16T10:03:44Z
dc.date.issued2014
dc.identifier.citationMRS Proceedings, 2014, Volume 1659, p. 143-148es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/21797
dc.descriptionProducción Científicaes
dc.description.abstractThe control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherCambridge University Presses
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectRaman Spectroscopyes
dc.titleRaman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructureses
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doi10.1557/opl.2014.197es
dc.relation.publisherversionhttps://www.cambridge.org/es
dc.peerreviewedSIes
dc.description.projectJunta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International


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