We investigated deformation of InP that was introduced by
thin, narrow, dielectric SiNx stripes on the (100) surface of
InP substrates. Quantitative optical measurements were
performed using two different techniques based on luminescence
from the InP: first, by degree of polarization of
photoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus together provide a means to evaluate approaches to simulation of the deformation owing to dielectric stripes. Ultimately, these deformations can be used to estimate changes in refractive index and gain that are a result of the stripes
