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dc.contributor.authorNavarro, A.
dc.contributor.authorMartínez Sacristán, Óscar 
dc.contributor.authorGaliana, Beatriz
dc.contributor.authorLombardero, I.
dc.contributor.authorOchoa, M.
dc.contributor.authorGarcía, I.
dc.contributor.authorGabás, M.
dc.contributor.authorBallesteros, Carmen
dc.contributor.authorJiménez López, Juan Ignacio 
dc.contributor.authorAlgora, C.
dc.date.accessioned2018-08-31T08:30:04Z
dc.date.available2018-08-31T08:30:04Z
dc.date.issued2018
dc.identifier.citationJournal of Electronic Materials, 2018, Volume 47, Issue 9, pp 5061–5067es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/31326
dc.description.abstractThe effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherSpringeres
dc.relation.ispartofseriesTopical Collection: 17th Conference on Defects (DRIP XVII)
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.classificationDilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealinges
dc.titleCathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloyses
dc.typeinfo:eu-repo/semantics/bookPartes
dc.identifier.doihttps://doi.org/10.1007/s11664-018-6325-3
dc.relation.publisherversionhttps://link.springer.com/article/10.1007/s11664-018-6325-3
dc.description.projectSpanish Government (MINECO Project ENE2014- 56069-C4-4-R) and Junta de Castilla y Leo´n (VA293U13 and VA081U16 Projects). The Ministry of Economy and Competitiveness MINECO supports this work through Projects TEC2014-54260- C3-1-P, TEC2014-54260-C3-2-P, TEC2014-54260- C3-3-P, PCIN-2015-181-C02-01 and PCIN-2015- 181-C02-02.es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International


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