dc.contributor.author | Navarro, A. | |
dc.contributor.author | Martínez Sacristán, Óscar | |
dc.contributor.author | Galiana, Beatriz | |
dc.contributor.author | Lombardero, I. | |
dc.contributor.author | Ochoa, M. | |
dc.contributor.author | García, I. | |
dc.contributor.author | Gabás, M. | |
dc.contributor.author | Ballesteros, Carmen | |
dc.contributor.author | Jiménez López, Juan Ignacio | |
dc.contributor.author | Algora, C. | |
dc.date.accessioned | 2018-08-31T08:30:04Z | |
dc.date.available | 2018-08-31T08:30:04Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 5061–5067 | es |
dc.identifier.uri | http://uvadoc.uva.es/handle/10324/31326 | |
dc.description.abstract | The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission. | es |
dc.format.mimetype | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | Springer | es |
dc.relation.ispartofseries | Topical Collection: 17th Conference on Defects (DRIP XVII) | |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | |
dc.subject.classification | Dilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealing | es |
dc.title | Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys | es |
dc.type | info:eu-repo/semantics/bookPart | es |
dc.identifier.doi | https://doi.org/10.1007/s11664-018-6325-3 | |
dc.relation.publisherversion | https://link.springer.com/article/10.1007/s11664-018-6325-3 | |
dc.description.project | Spanish Government (MINECO Project ENE2014- 56069-C4-4-R) and Junta de Castilla y Leo´n (VA293U13 and VA081U16 Projects). The Ministry of Economy and Competitiveness MINECO supports this work through Projects TEC2014-54260- C3-1-P, TEC2014-54260-C3-2-P, TEC2014-54260- C3-3-P, PCIN-2015-181-C02-01 and PCIN-2015- 181-C02-02. | es |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 International |
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