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    Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/32379

    Título
    Residual strain and electrical activity of defects in multicrystalline silicon solar cells
    Autor
    Martínez Sacristán, ÓscarAutoridad UVA Orcid
    Mass, Julio
    Tejero, A.
    Moralejo, B.
    Hortelano Santos, VanesaAutoridad UVA
    González Rebollo, Miguel ÁngelAutoridad UVA
    Jiménez López, Juan IgnacioAutoridad UVA Orcid
    Parra, Vicente
    Año del Documento
    2014
    Editorial
    Polish Academy of Sciences Institute of Physics
    Descripción
    Producción Científica
    Documento Fuente
    Acta Physica Polonica A 2014; 125. pp. 1013-1016
    Abstract
    The growth process by casting methods of multi-crystalline Si results in a crystalline material with, among other defects, a high density of dislocations and grain boundaries. Impurity incorporation and their gathering around grain boundaries and dislocations seem to be the main factor determining the electrical activity of those defects, which limit the minority carrier lifetime. In this work, we analyze multi-crystalline Si samples by combining etching processes to reveal the defects, Raman spectroscopy for strain measurements, and light beam induced current measurements for the localization of electrically active defects. In particular, we have explored the etching routes capable to reveal the main defects (grain boundaries and dislocation lines), while their electrical activity is studied by the light beam induced current technique. We further analyze the strain levels around these defects by Raman micro-spectroscopy, aiming to obtain a more general picture of the correlation between residual stress and electrical activity of the extended defects. The higher stress levels are observed around intra-grain defects associated with dislocation lines, rather than around the grain boundaries. On the other hand, the intra-grain defects are also observed to give dark light beam induced current contrast associated with a higher electrical activity of these defects as compared to the grain boundaries
    Palabras Clave
    Silicio cristalino
    Crystalline silicon
    ISSN
    1898-794X
    Revisión por pares
    SI
    DOI
    10.12693/APhysPolA.125.1013
    Patrocinador
    Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. A166A11-2)
    Ministerio de Ciencia e innovación (IPT-420000-2010- -022 INNPACTO program)
    Version del Editor
    http://przyrbwn.icm.edu.pl/APP/SPIS/a125-4.html
    Idioma
    eng
    URI
    http://uvadoc.uva.es/handle/10324/32379
    Derechos
    openAccess
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    • DEP32 - Artículos de revista [284]
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    Universidad de Valladolid

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