Defects created by chemical and laser texturization on the surface of mc-Si wafers studied by optical means [Poster]

Abstract

Chemical texturization of mc-Si wafer surfaces produces different patterns, allowing for a diffuse surface which increases the light absorption and the final cell efficiency. Alkaline chemical texturizations are typical for c-Si. Chemical texturizations based on the HF:HNO3 solution are a general option for mc-Si, giving different surface morphology textures: pits, moth eyes, grooves, etc. Laser texturization processes have been also explored. Texturization processes can introduce detrimental defects in the material, e.g. laser texturization can produce residual stresses or even amorphous phases.