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Please use this identifier to cite or link to this item: http://uvadoc.uva.es/handle/10324/35199
Title: Defects created by chemical and laser texturization on the surface of mc-Si wafers studied by optical means [Poster]
Authors: Vera, David
Mass, Julio
Manotas, Milton
Cabanzo, Rafael
Rodríguez Conde, Sofía
Vicente, Jose María
Martínez Sacristán, Óscar
Conference: 17th Conference on Defects (DRIP XVII)
Issue Date: 2017
Citation: 17th International Conference DRIP: Defects-Recognition, Imaging and Physics in Semiconductors, 8th to the 12th of October 2017, Valladolid, Spain
Abstract: Chemical texturization of mc-Si wafer surfaces produces different patterns, allowing for a diffuse surface which increases the light absorption and the final cell efficiency. Alkaline chemical texturizations are typical for c-Si. Chemical texturizations based on the HF:HNO3 solution are a general option for mc-Si, giving different surface morphology textures: pits, moth eyes, grooves, etc. Laser texturization processes have been also explored. Texturization processes can introduce detrimental defects in the material, e.g. laser texturization can produce residual stresses or even amorphous phases.
Sponsor: Ministerio de Economía, Industria y Competitividad (Project ENE2014-56069-C4-4-R)
Note: Póster
Publisher Version: http://drip17.org/home/
Language: eng
URI: http://uvadoc.uva.es/handle/10324/35199
Rights: info:eu-repo/semantics/openAccess
Appears in Collections:DEP32 - Comunicaciones a congresos, conferencias, etc.

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