Defects created by chemical and laser texturization on the surface of mc-Si wafers studied by optical means [Poster]
17th Conference on Defects (DRIP XVII)
Año del Documento
17th International Conference DRIP: Defects-Recognition, Imaging and Physics in Semiconductors, 8th to the 12th of October 2017, Valladolid, Spain
Chemical texturization of mc-Si wafer surfaces produces different patterns, allowing for a diffuse surface which increases the light absorption and the final cell efficiency. Alkaline chemical texturizations are typical for c-Si. Chemical texturizations based on the HF:HNO3 solution are a general option for mc-Si, giving different surface morphology textures: pits, moth eyes, grooves, etc. Laser texturization processes have been also explored. Texturization processes can introduce detrimental defects in the material, e.g. laser texturization can produce residual stresses or even amorphous phases.
Ministerio de Economía, Industria y Competitividad (Project ENE2014-56069-C4-4-R)
Version del Editor
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