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The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Seemen, Helina; Tamm, Aile; Kukli, Kaupo; Aarik, J. (2018)

Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films

González Ossorio, Óscar

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile; Kalam, Kristjan; Seemen, Helina; Kukli, Kaupo (2018)

Memory maps : Reading RRAM devices without power consumption

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Kukli, Kaupo; Mikkor, Mats; Kalam, Kristjan; Arroval, T.; Tamm, Aile (2018)

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

Kalam, Kristjan; Seemen, Helina; Ritslaid, Peeter; Rähn, Mihkel; Tamm, Aile; Kukli, Kaupo; Kasikov, Aarne; Link, Joosep; Stern, Raivo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

(2018)

Electric and magnetic properties of atomic layer deposited ZrO2-HfO2 thin films

Kalam, Kristjan; Seemen, Helina; Mikkor, Mats; Ritslaid, Peeter; Stern, Raivo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile; Kukli, Kaupo (2018)

Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides

Seemen, Helina; Rähn, Mihkel; Kalam, Kristjan; Sajavaara, Timo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Link, Joosep; Stern, Raivo; Kukli, Kaupo; Tamm, Aile (2018)