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dc.contributor.authorGonzález Ossorio, Óscar 
dc.contributor.authorPoblador Cester, Samuel
dc.contributor.authorVinuesa Sanz, Guillermo
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorMaestro Izquierdo, Marcos
dc.contributor.authorBargalló González, Mireia
dc.contributor.authorCampabadal Segura, Francesca
dc.date.accessioned2021-01-11T13:43:01Z
dc.date.available2021-01-11T13:43:01Z
dc.date.issued2020
dc.identifier.citation2020 IEEE Latin America Electron Devices Conference (LAEDC). San Jose, Costa Rica: IEEE Xplore, 2020es
dc.identifier.isbn978-1-7281-1044-8es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/44719
dc.descriptionProducción Científicaes
dc.description.abstractThree topologies of TiN/Ti/HfO 2 /W resistive switching memories (RRAM) are proposed in this work: crossbar, isolated and isolated-crossbar configurations. All configurations use the same sequence of technological processes. The different topologies are obtained by customizing the layouts corresponding to the bottom electrode (W), and the silicon oxide layer that is deposited on the bottom electrode. A comparative study of the resistive switching mechanisms in the three configurations has been carried out. DC current-voltage cycles and small signal conductance memory maps of single RRAM show relevant differences among the three topologies. Complex structures containing various devices (series, anti-series, parallel, antiparallel) have also been fabricated. Switching loops and memory maps obtained for these complex structures demonstrate that they are fully operative, validating the technological route to manufacture complete RRAM memory chips.es
dc.format.extent4 p.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherIEEE Xplorees
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subject.classificationHafnium oxidees
dc.subject.classificationÓxido de hafnioes
dc.subject.classificationRRAM chipses
dc.subject.classificationChips RRAMes
dc.titleSingle and complex devices on three topological configurations of HfO2 based RRAMes
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.rights.holder© 2020 IEEE Xplorees
dc.identifier.doi10.1109/LAEDC49063.2020.9073596es
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/9073596es
dc.title.event2020 IEEE Latin America Electron Devices Conference (LAEDC)es
dc.description.projectMinisterio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (grants TEC2017-84321- C4-1-R and TEC2017-84321-C4-2-R)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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