dc.contributor.author | González Ossorio, Óscar | |
dc.contributor.author | Poblador Cester, Samuel | |
dc.contributor.author | Vinuesa Sanz, Guillermo | |
dc.contributor.author | Dueñas Carazo, Salvador | |
dc.contributor.author | Castán Lanaspa, María Helena | |
dc.contributor.author | Maestro Izquierdo, Marcos | |
dc.contributor.author | Bargalló González, Mireia | |
dc.contributor.author | Campabadal Segura, Francesca | |
dc.date.accessioned | 2021-01-11T13:43:01Z | |
dc.date.available | 2021-01-11T13:43:01Z | |
dc.date.issued | 2020 | |
dc.identifier.citation | 2020 IEEE Latin America Electron Devices Conference (LAEDC). San Jose, Costa Rica: IEEE Xplore, 2020 | es |
dc.identifier.isbn | 978-1-7281-1044-8 | es |
dc.identifier.uri | http://uvadoc.uva.es/handle/10324/44719 | |
dc.description | Producción Científica | es |
dc.description.abstract | Three topologies of TiN/Ti/HfO 2 /W resistive switching memories (RRAM) are proposed in this work: crossbar, isolated and isolated-crossbar configurations. All configurations use the same sequence of technological processes. The different topologies are obtained by customizing the layouts corresponding to the bottom electrode (W), and the silicon oxide layer that is deposited on the bottom electrode. A comparative study of the resistive switching mechanisms in the three configurations has been carried out. DC current-voltage cycles and small signal conductance memory maps of single RRAM show relevant differences among the three topologies. Complex structures containing various devices (series, anti-series, parallel, antiparallel) have also been fabricated. Switching loops and memory maps obtained for these complex structures demonstrate that they are fully operative, validating the technological route to manufacture complete RRAM memory chips. | es |
dc.format.extent | 4 p. | es |
dc.format.mimetype | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | IEEE Xplore | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject.classification | Hafnium oxide | es |
dc.subject.classification | Óxido de hafnio | es |
dc.subject.classification | RRAM chips | es |
dc.subject.classification | Chips RRAM | es |
dc.title | Single and complex devices on three topological configurations of HfO2 based RRAM | es |
dc.type | info:eu-repo/semantics/conferenceObject | es |
dc.rights.holder | © 2020 IEEE Xplore | es |
dc.identifier.doi | 10.1109/LAEDC49063.2020.9073596 | es |
dc.relation.publisherversion | https://ieeexplore.ieee.org/document/9073596 | es |
dc.title.event | 2020 IEEE Latin America Electron Devices Conference (LAEDC) | es |
dc.description.project | Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (grants TEC2017-84321- C4-1-R and TEC2017-84321-C4-2-R) | es |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.type.hasVersion | info:eu-repo/semantics/publishedVersion | es |
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