• español
  • English
  • français
  • Deutsch
  • português (Brasil)
  • italiano
    • español
    • English
    • français
    • Deutsch
    • português (Brasil)
    • italiano
    • español
    • English
    • français
    • Deutsch
    • português (Brasil)
    • italiano
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Navegar

    Todo o repositórioComunidadesPor data do documentoAutoresAssuntosTítulos

    Minha conta

    Entrar

    Estatística

    Ver as estatísticas de uso

    Compartir

    Ver item 
    •   Página inicial
    • PRODUÇÃO CIENTÍFICA
    • Departamentos
    • Dpto. Electricidad y Electrónica
    • DEP22 - Capítulos de monografías
    • Ver item
    •   Página inicial
    • PRODUÇÃO CIENTÍFICA
    • Departamentos
    • Dpto. Electricidad y Electrónica
    • DEP22 - Capítulos de monografías
    • Ver item
    • español
    • English
    • français
    • Deutsch
    • português (Brasil)
    • italiano

    Exportar

    RISMendeleyRefworksZotero
    • edm
    • marc
    • xoai
    • qdc
    • ore
    • ese
    • dim
    • uketd_dc
    • oai_dc
    • etdms
    • rdf
    • mods
    • mets
    • didl
    • premis

    Citas

    Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/46388

    Título
    Atomistic modeling of laser-related phenomena
    Autor
    Marqués Cuesta, Luis AlbertoAutoridad UVA Orcid
    Aboy Cebrián, MaríaAutoridad UVA Orcid
    López Martín, PedroAutoridad UVA Orcid
    Santos Tejido, IvánAutoridad UVA Orcid
    Pelaz Montes, María LourdesAutoridad UVA Orcid
    Fisicaro, Giuseppe
    Año del Documento
    2021
    Editorial
    Elsevier
    Descripción
    Producción Científica
    Documento Fuente
    Marqués, L. A., Aboy, M., López, P., Santos, I., Pelaz, L., Fisicaro, G. Atomistic modeling of laser-related phenomena. In: Laser Annealing Processes in Semiconductor Technology Theory, Modeling and Applications in Nanoelectronics Woodhead Publishing Series in Electronic and Optical Materials, 2021, Pages 79-136
    Resumo
    Due to the intrinsic features of laser annealing treatments in semiconductors, i.e., localized irradiation with a space- and time-dependent thermal field that leads to far-from-equilibrium conditions, experimental analysis can reveal only specimen postirradiation characteristics. In order to understand how the laser-irradiated system evolves and reaches its final state, a theoretical work based on full process simulation is required. Traditional models for laser processing simulation were based on continuum techniques. However, they prove to be insufficient at the nanoscale. Atomistic simulation techniques, in turn, are handy for studying detailed interactions, at both electronic and atomic levels, including out-of-equilibrium situations as those present in laser processing. In this chapter, we review the main techniques for atomistic simulation to be applied for laser modeling. We also present some recent results on atomistic modeling of laser-related phenomena in Si, in particular melting and regrowth processes, defect and dopant kinetics, dopant segregation, and the anomalous formation of extended defects.
    Palabras Clave
    Dinámica molecular
    Molecular dynamics
    Simulación atomística
    Atomistic simulation
    ISBN
    978-0-12-820255-5
    Version del Editor
    https://www.sciencedirect.com/science/article/pii/B9780128202555000039
    Propietario de los Derechos
    © 2021 Elsevier
    Idioma
    eng
    URI
    http://uvadoc.uva.es/handle/10324/46388
    Tipo de versión
    info:eu-repo/semantics/acceptedVersion
    Derechos
    openAccess
    Aparece en las colecciones
    • Electrónica - Capítulos de Monografías [1]
    • DEP22 - Capítulos de monografías [2]
    Mostrar registro completo
    Arquivos deste item
    Nombre:
    Introduction_Marques_Chapter_LaserModeling.pdf
    Tamaño:
    199.5Kb
    Formato:
    Adobe PDF
    Thumbnail
    Visualizar/Abrir
    Attribution-NonCommercial-NoDerivatives 4.0 InternacionalExceto quando indicado o contrário, a licença deste item é descrito como Attribution-NonCommercial-NoDerivatives 4.0 Internacional

    Universidad de Valladolid

    Powered by MIT's. DSpace software, Version 5.10