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Título
3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
Año del Documento
2021
Editorial
AIP Publishing
Descripción
Producción Científica
Documento Fuente
Applied Physics Letters, 2021, vol. 118, n. 21. 5 p.
Abstract
ABSTRACT
Interest in the integration of graphene and semiconductor nanowires (NWs) increased dramatically during the last two decades along with the overwhelming development of graphene technology. The possibility of combining the countless properties of graphene with the singular optical behavior of semiconductor NWs leads the way to the design of unique photonic nanodevices. In this work, the optical response of Si/SiGe axially heterostructured NWs deposited over a graphene monolayer is investigated. The results demonstrate the enhancement of the graphene Raman signal under the influence of the NW. Moreover, the presence of an axial heterojunction in the NW is shown to locally hinder this enhancement through the full confinement of the incident electromagnetic field inside the NW body around the heterojunction. This complex interaction could be the basis for near-field probes for molecules or 2D materials, and optoelectronic devices including graphene/NW interfaces.
Palabras Clave
Optoelectronic devices
Dispositivos optoelectrónicos
Semiconductor nanostructures
Nanoestructuras semiconductoras
Raman spectroscopy
Espectroscopia Raman
Graphene
Grafeno
ISSN
1077-3118
Revisión por pares
SI
Patrocinador
Junta de Castilla y León (project VA283P18)
Gobierno de España (grants ENE 2014-56069-C4-4-R and FPU14/00916)
Gobierno de España (grants ENE 2014-56069-C4-4-R and FPU14/00916)
Version del Editor
Propietario de los Derechos
© 2021 AIP Publishing
Idioma
eng
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
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