A cathodoluminescence study on the diffusion length in InGaAlP/InGaP/GaAs heterostructures

Título

dc.contributor.author	Dadgostar, Shabnam
dc.contributor.author	Belloso, Cantia
dc.contributor.author	Martinez, Oscar
dc.contributor.author	Jimenez, Juan
dc.date.accessioned	2022-04-20T09:34:15Z
dc.date.available	2022-04-20T09:34:15Z
dc.date.issued	2019
dc.identifier.citation	Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII, Berlín, Alemania, 2019	es
dc.identifier.uri	https://uvadoc.uva.es/handle/10324/52844
dc.description.abstract	- Carrier recombination is critical for the operation of many devices, e.g. solar cells, light emitting diodes, and laser diodes. - The diffusion length depends on the band structure of the material, the crystal quality, alloy scattering, doping, and the presence of defects	es
dc.format.mimetype	application/pdf	es
dc.language.iso	spa	es
dc.rights.accessRights	info:eu-repo/semantics/openAccess	es
dc.title	A cathodoluminescence study on the diffusion length in InGaAlP/InGaP/GaAs heterostructures	es
dc.type	info:eu-repo/semantics/conferenceObject	es
dc.title.event	Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII	es
dc.description.project	Proyecto de Investigación ENE2017-89561-C4-3-R (MCIN)	es
dc.description.project	Proyecto de Investigación VA283P18 (Junta de Castilla y León)	es
dc.type.hasVersion	info:eu-repo/semantics/updatedVersion	es