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dc.contributor.authorDadgostar, Shabnam
dc.contributor.authorBelloso, Cantia
dc.contributor.authorMartinez, Oscar
dc.contributor.authorJimenez, Juan
dc.date.accessioned2022-04-20T09:34:15Z
dc.date.available2022-04-20T09:34:15Z
dc.date.issued2019
dc.identifier.citationDefects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII, Berlín, Alemania, 2019es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/52844
dc.description.abstract- Carrier recombination is critical for the operation of many devices, e.g. solar cells, light emitting diodes, and laser diodes. - The diffusion length depends on the band structure of the material, the crystal quality, alloy scattering, doping, and the presence of defectses
dc.format.mimetypeapplication/pdfes
dc.language.isospaes
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.titleA cathodoluminescence study on the diffusion length in InGaAlP/InGaP/GaAs heterostructureses
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.title.eventDefects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIIIes
dc.description.projectProyecto de Investigación ENE2017-89561-C4-3-R (MCIN)es
dc.description.projectProyecto de Investigación VA283P18 (Junta de Castilla y León)es
dc.type.hasVersioninfo:eu-repo/semantics/updatedVersiones


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