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dc.contributor.authorStrempfer, J.
dc.contributor.authorCardona, M.
dc.contributor.authorSchwoerer-Böhning, M.
dc.contributor.authorRequardt, H.
dc.contributor.authorLorenzen, M.
dc.contributor.authorStojetz, B.
dc.contributor.authorPavone, P.
dc.contributor.authorChoyke, Wolfgang J.
dc.contributor.authorSerrano Gutiérrez, Jorge
dc.date.accessioned2024-01-30T13:24:23Z
dc.date.available2024-01-30T13:24:23Z
dc.date.issued2003
dc.identifier.citationMaterials Science Forum Vols 433-436 (2003) pp 257-260es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/65343
dc.description.abstractWe have measured the phonon dispersion relations of 4H-SiC by inelastic x-ray scattering (IXS) using monochromatized synchrotron radiation. The q-space directions Gamma-K-M, Gamma-M, and Gamma-A were mapped out. Lattice dynamical calculations that allowed the prediction of phonon eigenvectors, as well as their symmetries, also helped in choosing the best scattering geometries. The IXS phonon data are compared with those previously obtained from low temperature photoluminescence measurements and from laser Raman spectroscopy.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherTrans Tech Publications Ltd.es
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.titleLattice Dynamics of 4H-SiC by Inelastic X-Ray Scatteringes
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doi10.4028/www.scientific.net/MSF.433-436.257es
dc.identifier.publicationfirstpage257es
dc.identifier.publicationlastpage260es
dc.identifier.publicationtitleMaterials Science Forumes
dc.identifier.publicationvolume433-436es
dc.peerreviewedSIes
dc.identifier.essn1662-9752es
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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