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dc.contributor.author | Martín Encinar, Luis | |
dc.contributor.author | Marqués Cuesta, Luis Alberto | |
dc.contributor.author | Aboy Cebrián, María | |
dc.contributor.author | López Martín, Pedro | |
dc.contributor.author | Santos Tejido, Iván | |
dc.contributor.author | Pelaz Montes, María Lourdes | |
dc.date.accessioned | 2024-03-07T09:38:00Z | |
dc.date.available | 2024-03-07T09:38:00Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | 14th Spanish Conference on Electron Devices (CDE), Valencia, Spain, 2023 | es |
dc.identifier.isbn | 979-8-3503-0240-0 | es |
dc.identifier.uri | https://uvadoc.uva.es/handle/10324/66550 | |
dc.description | Producción Científica | es |
dc.description.abstract | We studied epitaxial growth of Ge films on Si(001) 2×1 at different temperatures using classical molecular dynamics simulations. Ge-Si intermixing contributes to strain accommodation mostly in the original Si substrate surface and first grown Ge layer. Stress accumulation is further released by the generation of dislocations whose amount and type depend on temperature. At high temperatures, a larger amount and more variety of dislocations are formed, thus affecting the surface morphology and consequently the size of 3D islands. | es |
dc.format.extent | 4 p. | es |
dc.format.mimetype | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | es |
dc.rights.accessRights | info:eu-repo/semantics/restrictedAccess | es |
dc.subject.classification | Temperature dependence | es |
dc.subject.classification | Three-dimensional displays | es |
dc.subject.classification | Films | es |
dc.subject.classification | Surface morphology | es |
dc.subject.classification | Germanium | es |
dc.subject.classification | Semiconductor process modeling | es |
dc.subject.classification | Epitaxial growth | es |
dc.subject.classification | Molecular dynamics | es |
dc.subject.classification | GeSi | es |
dc.subject.classification | Stress relaxation | es |
dc.subject.classification | Intermixing | es |
dc.subject.classification | Dislocations | es |
dc.title | Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates | es |
dc.type | info:eu-repo/semantics/conferenceObject | es |
dc.rights.holder | © IEEE | es |
dc.identifier.doi | 10.1109/CDE58627.2023.10339527 | es |
dc.relation.publisherversion | https://ieeexplore.ieee.org/document/10339527 | es |
dc.title.event | 14th Spanish Conference on Electron Devices (CDE) | es |
dc.description.project | PID2020-115118GB-I00: Atomistic modeling of high energy irradiation in semiconductors, Ministerio de Ciencia e Innovación | es |
dc.description.project | TEC2017-86150-P: Atomistic modeling of epitaxial growth mechanisms of SiGe, Ministerio de Ciencia e Innovación | es |
dc.description.project | Fondos FEDER VA097P17: Study of advanced technological processes for manufacturing nanometric electronic devices through predictive simulation techniques | es |
dc.type.hasVersion | info:eu-repo/semantics/publishedVersion | es |
dc.subject.unesco | 2202.03 Electricidad | es |